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Publications

Publications of Pulsed Power Laboratory

LIST OF PRINCIPAL PUBLICATIONS

1. Kotov Yu.A., Mesyats G.A., Rukin S.N., Filatov A.L., Lyubutin S.K. A novel nanosecond semiconductor opening switch for megavolt repetitive pulsed power technology: experiment and applications. // In Proc.: IX Int. IEEE Pulsed Power Conference. Albuquerque, NM, USA, 1993. V. 1. P. 134 - 139.

2. Darznek S.A., Mesyats G.A., Rukin S.N. Dynamics of Electron-Hole Plasma in Semiconductor Opening Switches for Ultradense Currents // Technical Physics. V. 42. No 10. 1997. pp. 1170 - 1175.

3. S.N. Rukin. High-Power Nanosecond Pulse Generators Based on Semiconductor Opening Switches (Review) // Instruments and Experimental Techniques, vol. 42, No 4, 1999, p.p. 439-467.

4. Darznek S.A., Rukin S.N., Tsyranov S.N. Effect of Structure Doping Profile on the Current Switching-Off Process in Power Semiconductor Opening Switches // Technical Physics. V. 45. No 4. 2000. pp. 436 - 442.

5. Lyubutin S.K., Rukin S.N., and Slovikovsky B.G. A compact semiconductor opening switch-based generator with a 300-kV output voltage and up to 2-kHz pulse repetition rate // Instruments and Experimental Techniques, vol. 43, No 1, 2000, p.p. 73-77.

6. Lyubutin S.K., Rukin S.N., Slovikovsky B.G., and Tsyranov S.N. High-frequency pulse gen-erators based on SOS diodes with subnanosecond current cutoff time // Instruments and Experimental Techniques, vol. 43, No 3, 2000, p.p. 331-338.

7. S. N. Rukin and S. N. Tsyranov. Subnanosecond Breakage of Current in High-Power Semi-conductor Switches. // Technical Physics Letters, vol. 26, No. 9, 2000, pp. 824 - 826.

8. S.N. Rukin, G.A. Mesyats, A.V. Ponomarev, B.G. Slovikovsky, S.P. Timoshenkov, A.I. Bushlyakov. Megavolt repetitive SOS-based generator // Proc. of 13th IEEE Int. Pulsed Power Conf., Las Vegas, Nevada, USA, June 17-22, 2001, V. 2, p. 1272-1275.

9. A.V. Ponomarev, S.N. Rukin, and S.N. Tsyranov. Investigation of the process of voltage distribution over elements of a high-power semiconductor current interrupter // Technical Physics Letters, vol. 27, No. 10, 2001, pp. 857 - 859.

10. Darznek S.A., Lyubutin S.K., Rukin S.N., and Slovikovsky B.G. Generation of microwave oscillations in a no-base diode // Semiconductors, vol. 36, No 5, 2002, p.p. 599-604.

11. A.I. Bushlyakov, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.P. Timoshenkov. A Megavolt Nanosecond Generator with a Semiconductor Opening Switch // Instruments and Experimental Techniques, vol. 45, No 2, 2002, p.p. 213-219.

12. E.A. Alichkin, S.K. Lyubutin, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky. Formation of Short Pulses with a Subnanosecond Rise Time and a Peak Power of Up to 1 GW by a Semi-conductor Avalanche Sharpener // Instruments and Experimental Techniques, vol. 45, No 4, 2002, p.p. 535-539.

13. S.N. Rukin, and S.N. Tsyranov. The effect of a space charge on the operation of a high-power semiconductor current interrupter // Technical Physics Letters, vol. 30, No. 1, 2004, pp. 19 - 22.

14. S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsyranov. Ultrafast current switch-ing using the tunneling-assisted impact ionization front in a silicon semiconductor closing switch // Technical Physics Letters, vol. 31, No. 3, 2005, pp. 196 - 199.

15. A.I. Bushlyakov, S.K. Lyubutin, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.P. Ti-moshenkov, and S.N. Tsyranov. Solid-State SOS-Based Generator Providing a Peak Power of 4 GW // IEEE Transactions on Plasma Science. October 2006. Vol. 34. No 5. P. 1873 - 1878.

16. S.N. Rukin and S.N. Tsyranov. Simulation of the subnanosecond cutoff of current in high-power semiconductor diodes // Semiconductors, vol. 43, No 7, 2009, p.p. 957-962.

17. S.N. Rukin and S.N. Tsyranov. Effect of space charge on subnanosecond cutoff in power semiconductor diodes // Technical Physics. V. 54. No 11. 2009. pp. 1591 - 1596.

18. S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsyranov. Ultrahigh-power pico-second current switching by a silicon sharpener based on successive breakdown of structures // Semiconductors, vol. 44, No 7, 2010, p.p. 931-937.

19. S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, S.N. Tsyranov. High-Power Ultrafast Cur-rent Switching by a Silicon Sharpener Operating at an Electric Field Close to the Threshold of the Zener Breakdown // IEEE Transactions on Plasma Science. October 2010. Vol. 38. No 10. P. 2627 - 2632.

20. P.V. Vasiliev, S.K. Lyubutin, M.S. Pedos, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.P. Timoshenkov, and S.O. Cholakh. A nanosecond SOS-generator with a 20-kHz pulse repe-tition rate // Instruments and Experimental Techniques, vol. 53, No 6, 2010, p.p. 830-835.

21. P.V. Vasiliev, S.K. Lyubutin, M.S. Pedos, A.V. Ponomarev, S.N. Rukin, A.K. Sabitov, B.G. Slovikovsky, S.P. Timoshenkov, S.N. Tsyranov, and S.O. Cholakh. A SOS-generator for technological applications // Instruments and Experimental Techniques, vol. 54, No 1, 2011, p.p. 54-60.

22. S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsyranov. Operation of a semicon-ductor opening switch at ultrahigh current densities // Semiconductors, vol. 46, No 4, 2012, p.p. 519-527.

23. S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsyranov. Generation of powerful microwave voltage oscillations in a diffused silicon diode // Semiconductors, vol. 47, No 5, 2013, p.p. 670-678.

24. A.I. Gusev, S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsyranov. On the pico-second switching of a high-density current (60 kA/cm2) via a Si closing switch based on a superfast ionization front // Semiconductors, vol. 48, No 8, 2014, p.p. 1067-1078.

25. A.I. Gusev, S.K. Lyubutin, S.N. Rukin, and S.N. Tsyranov. A thyristor switch with a subnanosecond switching time // Instruments and Experimental Techniques, vol. 58, No 3, 2015, p.p. 376-380.

26. A.I. Gusev, M.S. Pedos, S.N. Rukin, S.P. Timoshenkov, and S.N. Tsyranov. A 6 GW nano-second solid-state generator based on semiconductor opening switch // Review of Scientific Instruments. 2015. V. 86. Issue 11. 114706.

27. A.I. Gusev, S.K. Lyubutin, S.N. Rukin, and S.N. Tsyranov. High-power thyristor switching via an overvoltage pulse with nanosecond rise time // Semiconductors, vol. 50, No 3, 2016, p.p. 394-403.

28. A.I. Gusev, S.K. Lyubutin, S.N. Rukin, and S.N. Tsyranov. Superfast thyristor-based switches operating in impact-ionization wave mode // IEEE Transactions on Plasma Science. October 2016. Vol. 44. No 10. P. 1888 - 1893.

29. A.I. Gusev, S.K. Lyubutin, S.N. Rukin, and S.N. Tsyranov. Study of the voltage drop pro-cess for the case of high-power thyristors switched in the impact-ionization mode // Semicon-ductors, vol. 51, No 5, 2017, p.p. 649-656.

30. A.I. Gusev, S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsyranov. High-current pulse switching by thyristors triggered in the impact-ionization wave mode // Instruments and Experimental Techniques, vol. 60, No 4, 2017, p.p. 545-550.

31. A.I. Gusev, M.S. Pedos, S.N. Rukin, and S.P. Timoshenkov. Solid-state repetitive genera-tor with a gyromagnetic nonlinear transmission line operating as a peak power amplifier // Review of Scientific Instruments. 2017. V. 88. Issue 7. 074703.

32. A.I. Gusev, M.S. Pedos, S.N. Rukin, S.P. Timoshenkov, and S.N. Tsyranov. Semiconductor sharpeners providing a subnanosecond voltage rise time of GW-range pulses // Review of Sci-entific Instruments. 2017. V. 88. Issue 11. 114704.


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