1. Lyubutin S.K., Rukin S.N., and Timoshenkov S.P. // Proc. of IX Symp. on High-Current Electronics, Russia, 1992, p.p. 218-219 (in Russian).

 

2. Kotov Yu.A., Mesyats G.A., Rukin S.N., Filatov A.L., Lyubutin S.K. A novel nanosecond semiconductor opening switch for megavolt repetitive pulsed power technology: experiment and applications. // In Proc.: IX Int. IEEE Pulsed Power Conference. Albuquerque, NM, USA, 1993. V. 1. P. 134 - 139.

 

3. Darznek S.A., Kotov Yu.A., Mesyats G.A., and Rukin S.N. SOS effect: nanosecond interruption of superdense currents in semiconductors. // Dokl. Ross. Acad. Nauk, 1994, vol. 334, No 3, p.p. 304 – 306 (in Russian).

 

4. Rukin S.N. Circuit for pulse magnetic compression. // RF Inventor’s Certificate No 2089042, Byull. Izobret., 1997, No 24, p. 426 (in Russian).

 

5. Darznek S.A., Mesyats G.A., Rukin S.N. Dynamics of Electron-Hole Plasma in Semiconductor Opening Switches for Ultradense Currents // Technical Physics. V. 42. No 10. 1997. pp. 1170 - 1175.

 

6. Lyubutin S.K., Mesyats G.A., Rukin S.N., and Slovikovsky B.G. Subnanosecond current interruption in powerful semiconductor diodes. // Dokl. Ross. Acad. Nauk, 1998, vol. 360, No 4, p.p. 477 – 479 (in Russian).

 

7. Darznek S.A., Lyubutin S.K., Rukin S.N., Slovikovsky B.G., and Tsyranov S.N. SOS diodes: nanosecond opening switches for interruption of superdense currents // Electrotechnika, 1999, No 4, p.p. 20 – 28 (in Russian).

 

8. S.N. Rukin. High-Power Nanosecond Pulse Generators Based on Semiconductor Opening Switches (Review) // Instruments and Experimental Techniques, vol. 42, No 4, 1999, p.p. 439-467.

 

9. Darznek S.A., Rukin S.N., Tsyranov S.N. Effect of Structure Doping Profile on the Current Switching-Off Process in Power Semiconductor Opening Switches // Technical Physics. V. 45. No 4. 2000. pp. 436 - 442.

 

10. Lyubutin S.K., Rukin S.N., and Slovikovsky B.G. A compact semiconductor opening switch-based generator with a 300-kV output voltage and up to 2-kHz pulse repetition rate // Instruments and Experimental Techniques, vol. 43, No 1, 2000, p.p. 73-77.

 

11. Darznek S.A., Lyubutin S.K., Rukin S.N., Slovikovsky B.G., and Tsyranov S.N. Semiconductor Opening Switch // RF Inventor’s Certificate No 2156014, H 01 L 29/86, Byull. Izobret., 2000, No 25 (in Russian).

 

12. Lyubutin S.K., Rukin S.N., Slovikovsky B.G., and Tsyranov S.N. High-frequency pulse generators based on SOS diodes with subnanosecond current cutoff time // Instruments and Experimental Techniques, vol. 43, No 3, 2000, p.p. 331-338.

 

13. S. N. Rukin and S. N. Tsyranov. Subnanosecond Breakage of Current in High-Power Semiconductor Switches. // Technical Physics Letters, vol. 26, No. 9, 2000, pp. 824 - 826.

 

14. S.N. Rukin, G.A. Mesyats, A.V. Ponomarev, B.G. Slovikovsky, S.P. Timoshenkov, A.I. Bushlyakov. Megavolt repetitive SOS-based generator // Proc. of 13th IEEE Int. Pulsed Power Conf., Las Vegas, Nevada, USA, June 17-22, 2001, V. 2, p. 1272-1275.

 

15. A.V. Ponomarev, S.N. Rukin, and S.N. Tsyranov. Investigation of the process of voltage distribution over elements of a high-power semiconductor current interrupter // Technical Physics Letters, vol. 27, No. 10, 2001, pp. 857 - 859.

 

16. Lyubutin S.K., Mesyats G.A., Rukin S.N., Slovikovsky B.G., and Alichkin E.A. Subnanosecond gigawatt peak power switching by a semiconductor diode sharpener // Dokl. Ross. Acad. Nauk, 2001, vol. 379, No 4, p.p. 470 – 472 (in Russian).

 

17. Darznek S.A., Lyubutin S.K., Rukin S.N., and Slovikovsky B.G. Generation of microwave oscillations in a no-base diode // Semiconductors, vol. 36, No 5, 2002, p.p. 599-604.

 

18. A.I. Bushlyakov, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.P. Timoshenkov. A Megavolt Nanosecond Generator with a Semiconductor Opening Switch // Instruments and Experimental Techniques, vol. 45, No 2, 2002, p.p. 213-219.

 

19. E.A. Alichkin, S.K. Lyubutin, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky. Formation of Short Pulses with a Subnanosecond Rise Time and a Peak Power of Up to 1 GW by a Semiconductor Avalanche Sharpener // Instruments and Experimental Techniques, vol. 45, No 4, 2002, p.p. 535-539.

 

20. S.N. Rukin, and S.N. Tsyranov. The effect of a space charge on the operation of a high-power semiconductor current interrupter // Technical Physics Letters, vol. 30, No. 1, 2004, pp. 19 - 22.

 

21. S.K. Lyubutin, G.A. Mesyats, S.N. Rukin, B.G. Slovikovsky, S.N. Tsyranov. Ultra-fast solid-state switching based on tunneling-assisted delayed breakdown device (TADBD) // Proc. of the Int. Power Modulator Conference, San Francisco, California, USA, May 23 – 26, 2004, P. 560-562.

 

22. S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsyranov. Ultrafast current switching using the tunneling-assisted impact ionization front in a silicon semiconductor closing switch // Technical Physics Letters, vol. 31, No. 3, 2005, pp. 196 - 199.

 

23. A.I. Bushlyakov, S.K. Lyubutin, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.P. Timoshenkov, and S.N. Tsyranov. Solid-State SOS-Based Generator Providing a Peak Power of 4 GW // IEEE Transactions on Plasma Science. October 2006. Vol. 34. No 5. P. 1873 - 1878.

 

24. S.K. Lyubutin, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.N. Tsyranov, P.V. Vasiliev. Solid-State IGBT/SOS-based Generators with 100-kHz Pulse Repetition Frequency // Proc. of 16th IEEE Int. Pulsed Power Conf., Albuquerque, New Mexico, USA, June 17-22, 2007, P. 861 – 864.

 

25. P.V. Vasiliev, S.K. Lyubutin, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.N. Tsyranov, and S.O. Cholakh. Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density // Semiconductors, vol. 43, No 7, 2009, p.p. 953-956.

 

26. S.N. Rukin and S.N. Tsyranov. Simulation of the subnanosecond cutoff of current in high-power semiconductor diodes // Semiconductors, vol. 43, No 7, 2009, p.p. 957-962.

 

27. S.N. Rukin and S.N. Tsyranov. Effect of space charge on subnanosecond cutoff in power semiconductor diodes // Technical Physics. V. 54. No 11. 2009. pp. 1591 - 1596.

 

28. S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsyranov. Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures // Semiconductors, vol. 44, No 7, 2010, p.p. 931-937.

 

29. S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, S.N. Tsyranov. High-Power Ultrafast Current Switching by a Silicon Sharpener Operating at an Electric Field Close to the Threshold of the Zener Breakdown // IEEE Transactions on Plasma Science. October 2010. Vol. 38. No 10. P. 2627 - 2632.

 

30. P.V. Vasiliev, S.K. Lyubutin, M.S. Pedos, A.V. Ponomarev, S.N. Rukin, B.G. Slovikovsky, S.P. Timoshenkov, and S.O. Cholakh. A nanosecond SOS-generator with a 20-kHz pulse repetition rate // Instruments and Experimental Techniques, vol. 53, No 6, 2010, p.p. 830-835.

 

31. P.V. Vasiliev, S.K. Lyubutin, M.S. Pedos, A.V. Ponomarev, S.N. Rukin, A.K. Sabitov, B.G. Slovikovsky, S.P. Timoshenkov, S.N. Tsyranov, and S.O. Cholakh. A SOS-generator for technological applications // Instruments and Experimental Techniques, vol. 54, No 1, 2011, p.p. 54-60.