SOS diodes Ц nanosecond semiconductor opening switches with high current density Ц have been developed. The devices are intended to produce high-voltage pulses by means of a current cutoff in inductive energy storages.
The devices have the following parameters:
voltage pulse amplitude
up to 200 kV
up to 10 kA
current cutoff time
1 to 20 ns
voltage pulse duration
up to 100 ns
less than 1 µs
Series and parallel connection of the SOS diodes into a common unit makes it possible to develop opening switches having a megavolt operating voltage and a gigawatt switching power in combination with a pulse repetition frequency of over 1 kHz.
(a) External appearance of SOSЦ200Ц8 stack (peak voltage Ц 200 kV, cutoff current Ц 8 kA, diameter Ц 64 mm, length Ц 156 mm, mass Ц 760 g): 1Цcathode electrode; 2Цanode electrode; 3Цstack of the series connected diodes and coolers; 4Цcooler; 5Цelementary SOS diode
(b) External appearance of SOSЦ50Ц1 stack (peak voltage Ц 50 kV, cutoff current Ц 1 kA, diameter Ц 27 mm, length Ц 50 mm, mass Ц 30 g).