A fundamentally important feature of the SOS effect is established and investigated. It consists in the fact that at the current cutoff stage, a uniform automatic voltage distribution occurs over a large number of series-connected diodes (structures). This makes it possible to create opening switches of a megavolt level by simple connecting the diodes in series without using any external voltage dividers.

High-voltage semiconductor devices of a new class – SOS diodes – are created, which are powerful solid-state nanosecond high-density current opening switches. The devices have a large depth of p-n junction in the structures and are designed to generate high-voltage pulses by current interruption in inductive energy storages. SOS diodes parameters: voltage pulse amplitude – up to 200 kV, cutoff current – up to 10 kA, current cutoff time – 1–20 ns. The serial and parallel connection of the SOS diodes to the common unit allows the creation of megavolt level opening switches with a switching power over 1 GW and a repetition rate of up to 1 kHz.

Main publications: 3–4, 6, 9; see also the section "Developments".